Jw. Hong et al., Local charge trapping and detection of trapped charge by scanning capacitance microscope in the SiO2/Si system, APPL PHYS L, 75(12), 1999, pp. 1760-1762
Charge trapping induced by hot carriers in a metal-oxide-semiconductor capa
citor was studied with a scanning capacitance microscope (SCM). The local c
harge trapping/detrapping and the readout of the trapped charge in SiO2 was
performed using a SCM combined with an atomic force microscope. When apply
ing a voltage between the conductive probe tip and the p-type silicon subst
rate, hot carriers injected from silicon substrate into the SiO2 generated
a positive trapped charge in the 10-nm-thick SiO2 layer. The resulting shif
t in capacitance-voltage (C-V) curves due to the locally trapped charge was
measured by the high-frequency C-V measurement. For an application to the
ultrahigh density data storage field, we investigated how the charge trappi
ng and detrapping characteristics depend on the writing speed and bias volt
age. (C) 1999 American Institute of Physics. [S0003-6951(99)04938-4].