TiO2(001) surface of rutile TiO2 single crystals was studied by surface pho
tovoltage spectrum(SPS) and electrical field-induced surface photovoltage s
pectrum (EFISPS) technique. The two SPS responses peak at 360 nm and 410 nm
were identified as direct transition and indirect transition of TiO2(001)
plane, respectively. And it was found that the indirect transition of TiO2
was very sensitive to the external electrical field. These results indicate
that SPS and EFISPS are effective means to study the opto-electrical chara
cteristics of semiconductors.