Epitaxial growth of Cu2O (111) by electrodeposition

Authors
Citation
J. Lee et Y. Tak, Epitaxial growth of Cu2O (111) by electrodeposition, EL SOLID ST, 2(11), 1999, pp. 559-560
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
2
Issue
11
Year of publication
1999
Pages
559 - 560
Database
ISI
SICI code
1099-0062(199911)2:11<559:EGOC(B>2.0.ZU;2-4
Abstract
Cuprous oxide (Cu2O)(111) crystals have been prepared at 65 degrees C in we ak acidic media (pH 4.7) by electrodeposition. The morphology was observed by scanning electron microscopy and X-ray diffraction analysis was used for investigation of the crystal phase. When a low cathodic current, -0.5 mA/c m(2), was applied crystals formed on platinum electrode having only one pha se, Cu2O (111), and cuprous oxide was epitaxially grown with a triangular s tructure of (111) phase although the electrolysis time was different. The r ole of a local enhancement of pH at the cathode is observed to have facilit ated the deposition of Cu2O in weak acidic solution. (C) 1999 The Electroch emical Society. S1099-0062(99)06-113-1. All rights reserved.