We consider a two-dimensional semiconductor with a local attraction among t
he carriers. We study the ground state of this system as a function of the
semiconductor gap. We find a direct transition from a superconducting to an
insulating phase for no doping at a critical value; the single particle ex
citations being always gapped. For finite doping we find a smooth crossover
. We calculate the critical temperature due to both the particle excitation
s and the Berezinkii-Kosterlitz-Thouless transition.