The influence of ion beam sputtering on the composition of the near-surface region of silicon carbide layers

The concentrations and the lattice structure of silicon carbide layers and single crystals are influenced by ion beam sputtering. The influence of ion beam sputtering and primary ion energy on preferential sputtering is inves tigated by Auger measurements and T-DYN simulations. In dependence on prima ry ion energy C is enriched. Preferential sputtering increases with decreas ing ion energy. Sputtering has a strong influence on the Auger peak shapes of SiC. Except for low ion energy and glancing incidence the peak shapes ar e independent of the primary ion energy. T-DYN simulations help to explain and understand the near-surface processes during sputtering of SiC. For ion energy dependence of preferential sputtering there is a good agreement of the T-DYN simulation and the Auger measurement.