Silver films in the thickness range 3-12 nm were deposited on very clean Si
(lll) substrates at ambient temperature. The annealing up to temperatures o
f 650 degrees C was then studied using LEED/Auger, SEM and X-ray diffractio
n as well as resistivity and ellipsometry measurements. The films crack dur
ing annealing and silver islands are formed on the silicon surface. The coa
gulation results in a steep drop of the ellipsometric parameters Delta and
Psi in the temperature range 150-300 degrees C which can be attributed to t
he generation of surface plasmons and Mie plasmon polaritons, respectively.