Densely arrayed eight-wavelength semiconductor lasers fabricated by microarray selective epitaxy

This paper describes a novel epitaxial growth technique, called microarray selective epitaxy (MASE), for fabricating extremely small integrated photon ic devices, The MASE technique makes it possible to form densely arrayed (p itch < 10 mu m) multiple-quantum-well (MQW) waveguides without semiconducto r etching as well as to control the bandgap energy of each waveguide, The t echnique is demonstrated for fabricating an eight-channel 10-mu m-spacing m icroarray MQW structure, and the bandgap wavelength of each channel is succ essfully controlled by changing the SiO2 mask pattern over a range of 90 nm , The technique is also applied to the fabrication of densely arrayed, eigh t-wavelength, Fabry-Perot laser diodes, The laser section is only 70 mu m w ide and 400 mu m long, Eight different lasing wavelengths (each over 80 nm) , a uniform threshold current of less than 9 mA, and an output power of ove r 10 mW are obtained.