Metamorphic DBR and tunnel-junction injection: A CW RT monolithic long-wavelength VCSEL

Authors
Boucart, J Starck, C Gaborit, F Plais, A Bouche, N Derouin, E Remy, JC Bonnet-Gamard, J Goldstein, L Fortin, C Carpentier, D Salet, P Brillouet, F Jacquet, J
Citation
J. Boucart et al., Metamorphic DBR and tunnel-junction injection: A CW RT monolithic long-wavelength VCSEL, IEEE S T QU, 5(3), 1999, pp. 520-529
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
5
Issue
3
Year of publication
1999
Pages
520 - 529
Database
ISI
SICI code
1077-260X(199905/06)5:3<520:MDATIA>2.0.ZU;2-H
Abstract
In this paper, we present and give details about the conception and realiza tion of the first monolithic long wavelength vertical-cavity surface-emitti ng laser (VCSEL) operating continuous wave at room temperature. This approa ch relies on two originalities: a metamorphic GaAs-AlAs distributed Bragg r eflector and an injection through a reverse-biased tunnel junction. Record output powers as high as 1 mW and a maximum operating temperature of 47 deg rees C have thus been achieved. Furthermore, in this paper, we present the optimization work on the different constituting parts of the VCSEL.