Ion-implanted GaAs-InGaAs lateral current injection laser

We have fabricated and characterized lateral current injection (LCI) ridge- waveguide lasers formed by ion-implanted injectors. Comprehensive optical a nd electrical measurements have been performed over a wide temperature rang e (10 K-300 K) on two sets of lasers with differing ridge widths and active region structures. Several new phenomena unique to the LCI mechanism have been observed, including a positive differential resistance kink at thresho ld, and inverse temperature-dependencies of quantum efficiency and threshol d current at cryogenic temperatures. Electron-hole mobility disparity, loca l carrier nonpinning above threshold due to photon-assisted ambipolar diffu sion, and intrinsically higher current densities have been identified as th e major factors governing these LCI laser characteristics, The results have important implications for future LCI laser design and ultimate performanc e.