Continuous-wave operation of GaInAsSb-GaSb Type-II quantum-well ridge-lasers

Authors
Joullie, A Glastre, G Blondeau, R Nicolas, JC Cuminal, Y Baranov, AN Wilk, A Garcia, M Grech, P Alibert, C
Citation
A. Joullie et al., Continuous-wave operation of GaInAsSb-GaSb Type-II quantum-well ridge-lasers, IEEE S T QU, 5(3), 1999, pp. 711-714
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
5
Issue
3
Year of publication
1999
Pages
711 - 714
Database
ISI
SICI code
1077-260X(199905/06)5:3<711:COOGTQ>2.0.ZU;2-Y
Abstract
Ridge-waveguide laser diodes emitting near 2.38 mu m have been fabricated f rom GaInAsSb-GaSb type-II quantum-well (QW) structures grown by molecular b eam epitaxy, These devices operated continuous-wave (CW) at room temperatur e, what is obtained for the first time from a type-II QW laser. At 23 degre es C threshold currents in the range 60-140 mA and CW output powers exceedi ng 1 mW/facet were obtained. These lasers showed a tendency to operate in a single longitudinal mode with a temperature red shift of 0.1 nm/degrees C and a current red shift of 0.06 nm/mA.