Theoretical optimization of self-pulsating 650-nm-wavelength AlGaInP laserdiodes

Self-pulsating laser diodes operating at a wavelength of 650 nm are attract ive for high-density optical storage. The main candidate for such a device is an AlGaInP laser diode including an epitaxially integrated saturable abs orber. The characteristic self-pulsation occurs due to the interplay betwee n gain in the active region and the absorption within the structure. In thi s paper, me calculate the dynamics of self-pulsation in this type of AlGaIn P laser diode, including a detailed description of gain and absorption with in the relative sections. In particular, we identify how, by modifying the structure of the epitaxial absorber layers, we can alter the operating char acteristics of these laser diodes.