High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm

Authors
Erbert, G Bugge, F Knauer, A Sebastian, J Thies, A Wenzel, H Weyers, M Trankle, G
Citation
G. Erbert et al., High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm, IEEE S T QU, 5(3), 1999, pp. 780-784
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
5
Issue
3
Year of publication
1999
Pages
780 - 784
Database
ISI
SICI code
1077-260X(199905/06)5:3<780:HTGQLE>2.0.ZU;2-G
Abstract
Tensile-strained GaAsP quantum wells embedded in AlGaAs large optical cavit y structures were studied. In the wavelength range between 715 and 790 nn, very high output power and excellent conversion efficiencies of broad-area lasers have been obtained.