Room-temperature pulsed operation of triple-quantum-well GaInNAs lasers grown on misoriented GaAs substrates by MOCVD

The lasing operation of three-quantum-well GaInNAs stripe geometry lasers g rown by MOCVD on 0 degrees and 6 degrees misoriented (100) GaAs substrates, respectively, hale been demonstrated and their performance is compared for the first time. Both devices achieved room temperature, pulsed lasing oper ation at an emission wavelength of 1.17 mu m, with a threshold current dens ity of 667 A/cm(2) for lasers grown; on 6 degrees misoriented substrates, a nd 1 kA/cm(2) for lasers grown on 0 degrees misoriented substrates, The thr eshold for the lasers grown on 6 degrees misoriented substrates compares fa vorably with the best results for GaInNAs lasers, Lasers with narrower stri pe width and a planar geometry have also been demonstrated by the use of la teral selective wet oxidation for current confinement, with a threshold cur rent density of 800 A/cm(2) for 25-mu m-wide devices.