1.48-mu m-wavelength ASM-DC-PBH LD's with extremely uniform lasing characteristics

Citation
Y. Sasaki et al., 1.48-mu m-wavelength ASM-DC-PBH LD's with extremely uniform lasing characteristics, IEEE PHOTON, 11(10), 1999, pp. 1211-1213
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
11
Issue
10
Year of publication
1999
Pages
1211 - 1213
Database
ISI
SICI code
1041-1135(199910)11:10<1211:1MALWE>2.0.ZU;2-3
Abstract
High-power 1.48-mu m erbium-doped fiber amplifier pumping laser diodes (LD' s) have been investigated using An Selective Metal-organic vapor phase epit axy grown (ASM) fabrication method. The method provided a precise dimension control of multiquantum-weil active layers and current blocking layers, re sulting in excellent current blocking characteristics and extremely uniform lasing characteristics even at high injection current. The average light o utput power of 262 mW at 1 A with a standard deviation of as small as 1.4 m W for 20 consecutive LD's has been achieved.