High-power 1.48-mu m erbium-doped fiber amplifier pumping laser diodes (LD'
s) have been investigated using An Selective Metal-organic vapor phase epit
axy grown (ASM) fabrication method. The method provided a precise dimension
control of multiquantum-weil active layers and current blocking layers, re
sulting in excellent current blocking characteristics and extremely uniform
lasing characteristics even at high injection current. The average light o
utput power of 262 mW at 1 A with a standard deviation of as small as 1.4 m
W for 20 consecutive LD's has been achieved.