Large-signal characterization of AlGaAs/GaAs HBT's

Authors
Li, B Prasad, S Yang, LW Wang, SC
Citation
B. Li et al., Large-signal characterization of AlGaAs/GaAs HBT's, IEEE MICR T, 47(9), 1999, pp. 1743-1746
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
47
Issue
9
Year of publication
1999
Part
1
Pages
1743 - 1746
Database
ISI
SICI code
0018-9480(199909)47:9<1743:LCOAH>2.0.ZU;2-S
Abstract
A modified Ebers-Moll level(3) model is developed for ALGaAs/GaAsheterojunc tion bipolar transistors (HBT's), The self-heating effect is modeled by a t hermal-electrical sub-circuit. The model is verified by comparing the large -signal RF simulation and measurement. Good agreement is achieved when the HBT is biased at low de power dissipation. The discrepancy between simulati on and measurement when the HBT is biased at high de power dissipation is e xplained by considering the self-heating effect under large-signal RF excit ation.