The purpose of this work is to study layout solutions aimed at increasing t
he breakdown voltage in silicon micro-strip detectors.
Several structures with multiple floating guards in different configuration
s have been designed and produced on high- resistivity silicon wafers. The
main electrical characteristics of these devices have been measured before
and after irradiation. Both radiation-induced surface and bulk damage effec
ts were considered as well. The highest breakdown voltage was found on devi
ces featuring p(+) guards without field plates. A simulation study has been
carried out on simplified structures to evaluate the distribution of the b
reakdown field as a function of the guard layout, The aim was the design op
timization.