Silicon detectors with 3-D electrode arrays: Fabrication and initial test results

The first three-dimensional detectors with n and p electrodes that penetrat e through the silicon substrate have been fabricated. Some expected propert ies, including low depletion voltages, wide voltage plateaus before leakage current limits are reached, and rapid charge collection are re,ie,red. Fab rication steps and initial test results for leakage currents and infrared s ignal detection are covered. The authors conclude with a description of cur rent work, including fabrication of active-edge detectors, ones with sensit ive areas that should extend to their physical edge.