Two-dimensional numerical simulation of edge-generated currents in type-inverted, p(+)-n single-sided silicon microstrip detectors

A theoretical study is presented showing that the reverse Leakage current t hermally generated at the cutting edge of type-inverted p(+)-n single-sided silicon microstrip detectors is limited. Such behavior is shown to be rela ted to a self-limiting mechanism acting on the edge surface generation, whi ch prevents the net generation rate of electron-hole pairs at the detector edge from exceeding a saturation value, as the local hole density approache s its equilibrium value.