Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology.

Authors
Dentan, M Abbon, P Borgeaud, P Delagnes, E Fourches, N Lachartre, D Lugiez, F Paul, B Rouger, M Truche, R Blanc, JP Faynot, O Leroux, C Delevoye-Orsier, E Pelloie, JL de Pontcharra, J Flament, O Guebhard, JM Leray, JL Montaron, J Musseau, O Vitez, A Le Mouellic, C Corbiere, T Dantec, A Festes, G Martinez, J Rodde, K
Citation
M. Dentan et al., Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology., IEEE NUCL S, 46(4), 1999, pp. 822-828
Citations number
43
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
46
Issue
4
Year of publication
1999
Part
1
Pages
822 - 828
Database
ISI
SICI code
0018-9499(199908)46:4<822:ITASOA>2.0.ZU;2-1
Abstract
DMILL1 technology integrates mixed analog-digital very rad-hard (>10 Mrad a nd >10(14) neutron/cm(2)) vertical bipolar, 0.8 mu m CMOS and 1.2 mu m PJFE T transistors on SOI2 substrate. In this paper, after a presentation of the DMILL program goal, we discuss in more detail the main technological choic es, the main milestones from the R&D to the industrial implementation, and the main results obtained after stabilization of the final process-flow in the MHS3 foundry.