Development of radiation-hard materials for microstrip detectors

We present the search for new detector materials, which would replace silic on as the bulk material in strip detectors for application in high radiatio n fields. The investigation focuses on SiC, a material with higher bandgap and thus l ess degradation after irradiation when compared with silicon. Both static p roperties like the capacitance and leakage currents and dynamic measurement s of the charge collection with low-noise amplifiers are presented.