Thin films of metal oxides are finding an increasing application in electro
nic devices. They can be deposited by a number of methods, however metalorg
anic chemical vapour deposition (MOCVD) offers the most flexible approach.
Key to the success of this technology is the manufacture and supply of suit
able precursors with sufficient volatility and stability, as well as adequa
te purity. In this article a number of manufacturing issues are discussed,
as well as the development of new precursors with improved physical propert
ies and enhanced MOCVD performance.