MOCVD of ferroelectric thin films

Ferroelectric thin films of lead titanate (PbTiO3) and lead zirconate titan ate (PZT) were grown in a cold-wall low-pressure chemical vapor deposition reactor on silicon substrates with diameters up to 150mm using liquid metal organic precursors including a novel zirconium precursor. Film thickness ranged from 10nm to 700nm. The films were characterized rega rding their electrical, optical, and structural properties depending on fil m composition and deposition conditions. In this paper, we report our resul ts regarding composition effects, the electrical polarization behavior and optical properties like refractive indices and absorption coefficient, whic h were investigated by spectroscopic ellipsometry for a wide wavelength ran ge. Furthermore some temperature dependent effects of the platinum electrod es are described.