OMVPE of GaN using (N-3)(2)Ga[(CH2)(3)N(CH3)(2)] (BAZIGA) in a cold wall reactor

Transparent,smooth, epitaxial and stoichiometric films of GaN were grown on Al2O3(0001) substrates at temperatures as low as 1070K with a growth rate of 2 mu m/hr using the title compound without any additional source of nitr ogen (ammonia). The concentrations of the fragments HGaNx and GaNx (x = 1 - 6) in the boundary layer as a function of temperature correlate with the g rowth rate (molecular beam sampling via pin hole, MS and REMPI-TOF spectros copy) of the GaN films deposited. This indicates that tailored single sourc e precursors offer a serious potential to grow films of group-13 nitrides s ignificantly below 1300K.