Chemical vapor deposition of tin oxide from SnEt4

This paper deals with the deposition and characterization of SnO2 thin film s, grown by the metalorganic chemical vapor deposition (MOCVD) technique in the temperature range of 320 - 470 degrees C, using tetraethyltin (SnEt4) as precursor and oxygen as oxidant reagent. A kinetic study of the growth p rocess has been carried out as a function of the deposition parameters and a simulation model of the growth rate was used to obtain rapidly thickness uniformity in a horizontal hot-wall CVD reactor. Alter deposition, the thin layers have been analyzed by various techniques to establish correlations between layers characteristics and growth conditions. The crystallographic structure and grain size were determinated by X-Ray Diffraction and Scannin g Electron Microscopy. The electrical resistivity as a function of depositi on temperature and precursor mole fraction is reported and discussed in cor relation with the microstructure. Finally, optimal operating conditions hav e been determinated in order to obtain layers with high specific area.