Growth of oxide buffer layers and YBCO films on various substrates by pulsed injection CVD

Bilayers composed from a YSZ or CeO2 buffer la,er and a YBCO film were in s itu grown on monocrystalline sapphire, MgO, silicon, vicinally polished sap phire and MgO substrates by single source pulsed injection CVD. Zr, Ce, Y,B a and Cu 2,2,6,6-tetramethyl-3,5-heptandionates dissolved in organic solven t were used for film deposition. CeO2/YBCO bilayers on sapphire were grown epitaxially and exhibited critical current densities up to 10(6) A/cm(2) at 77 K. YSZ and CeO2 buffer layers oil MgO substrates did not improved the p roperties of YBCO layers compared with YBCO films deposited directly on MgO surface; however, interesting microstructural properties of these heterost ructures were found. :Homogeneous YSZ films were also deposited on large Si substrates (3 inches in diameter).