In situ mass spetrometry during laser-induced chemical vapor deposition ofsilicon carbonitride

Citation
G. Korevaar et al., In situ mass spetrometry during laser-induced chemical vapor deposition ofsilicon carbonitride, J PHYS IV, 9(P8), 1999, pp. 763-768
Citations number
3
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
9
Issue
P8
Year of publication
1999
Part
2
Pages
763 - 768
Database
ISI
SICI code
1155-4339(199909)9:P8<763:ISMSDL>2.0.ZU;2-B
Abstract
Mass spectrometry provides a means to study the kinetics of the decompositi on of hexamethyldisilazane (HMDS) in detail. Towards this end, in situ mass spectrometry during Laser-Induced Chemical Vapor Deposition (LCVD) of sili con carbonitride is investigated. The reactant gases, HMDS, and ammonia, ar e heated by a continuous wave CO2-laser in a parallel configuration with th e substrate. In this way, silicon carbonitride deposits are formed at low s ubstrate temperatures (300 degrees C). Insight in the formation of reaction intermediairs during LCVD is obtained. The HMDS molecule splits at the Si- N bonding due to laser radiat::on.