Photo-MOCVD of Cu thin films using Cu(hfa)(MHY) as precursor

Pure Cu thin films were deposited in the temperature range 120-220 degrees C by Photo-MOCVD on different substrates using Cu(I) hexafluoroacetylaceton ate 2-methyl-1-hexene-3-yne, Cu(hfa)(MHY), as molecular precursor. Without UV activation, a selective growth of Cu was observed on both Si and Ag surf aces detrimental to Sig surface but this selectivity has a tendency to be l ost under photon irradiation. The growth rate is thermally activated and, f or instance, values as high as 700 nm/min were obtained on (100)Si at 220 d egrees C. Surprisingly, the growth rate is significantly reduced under UV i rradiation indicating that likely the photons favor the desorption of react ive species fi om the growing surface and have a low efficiency on the deco mposition and, subsequently, the nucleation and growth. No impurity was det ected by XPS analysis and the films exhibit resistivity very close to that of pure bulk copper.