High breakdown n(+)-GaAs/delta(p(+))-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD

This paper reports on the characteristics of n(+)-GaAs/delta(p(+))-GaInP/n- GaAs camel-gate heterojunction field-effect transistor (CAMFET) with the tr iple-step doped-channel. Due to the newly designed structure, the measured gate-drain turn-on and breakdown voltages are as high as 1.6 and 40 V for a fabricated 1x100 mu m(2) device, respectively. Furthermore, the measured m aximum transconductance is 145 mS/mm with the current gain cut-off frequenc y f(T) of 17 GHz and the maximum oscillation frequency f(max) of 33 GHz, re spectively. Based on excellent device characteristics, the studied device s hows a promise for circuit applications.