Prediction of LPCVD silicon film microstructure from local operating conditions using numerical modeling

Numerical modeling of LPCVD silicon film microstructure was performed by me ans of two combined numerical codes. First, a a two-dimensional kinetic rea ctor model was used to calculate the conditions at the gas-substrate interf ace. Next, these conditions were used as imput parameters of a semiempirica l two-dimensional statistical model in order to predict the cristallized co ntent of the deposits. This model also gave an image of the space distribut ion of crystallites inside the layer. A lot of experimental knowledge was r equired in order to develop a realistic algorithm, accounting for the most important events. Most of the coefficients of the empirical laws were obtai ned by fitting the calculations to various experiments. Although the capabi lities of our statistical model are yet limited, numerical simulations succ eeded in predicting several microstructural features of LPCVD silicon films from operating conditions.