LPCVD vertical furnace optimization for undoped polysilicon film deposition

thin film polysilicon deposition is a basic process in microelectronics, us ually carried in hot wall horizontal tubular reactors. With increasing wafe r dimension and tighter specifications, uniformity performance cannot be me t without significant productivity losses. Recently, new vertical reactors were introduced also to overcome those issues. Here the optimization of one of these growth apparatus is presented, being it carried through a suitabl e combination of experimental data (growth rates, intrinsic stress) and a m odeling analysis. The model consists of two mono-dimensional parts (for the inter-wafer region and for the annular region) and it is capable of quanti tative estimates of growth rates, under quite varying process conditions.