Modelling of SiC sublimation growth process: Influence of experimental parameters on crystal shape

Different computational tools help to provide information on the sublimatio n growth of SiC single crystals by the modified-Lely method. Local thermody namic equilibrium calculations coupled to heat and mass transfer can give v aluable data on the growth rate and the shape of the growing crystal. In th is contribution, we focus on the influence of the overall Ar pressure in th e growth cavity on the growing crystal shape for two different cavity geome tries (with and without a screen next to the seed crystal) having similar t emperature distributions. The results of this modelling will be compared to the experiments.