E. De Paola et al., Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure, J PHYS IV, 9(P8), 1999, pp. 221-228
The growth rate of epitaxial Si in a chemical vapor deposition barrel react
or was investigated. Trichlorosilane was employed as a precursor diluted in
H-2 carrier gas at 1 atm reactor pressure. The growth rates and the fluid
dynamics were analyzed using a software package, ESTET. A new complete chem
ical model was introduced considering chemical reactions in the gas phase a
nd on the solid surfaces. Finally, the predictive growth rate given by this
model was in a good agreement with experimental results for different posi
tions of the wafer on the support and for several operating conditions.