The LPCVD of rutile at low temperatures

Citation
Ml. Hitchman et J. Zhao, The LPCVD of rutile at low temperatures, J PHYS IV, 9(P8), 1999, pp. 357-364
Citations number
13
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
9
Issue
P8
Year of publication
1999
Part
1
Pages
357 - 364
Database
ISI
SICI code
1155-4339(199909)9:P8<357:TLORAL>2.0.ZU;2-S
Abstract
The crystalline structures of titanium dioxide (TiO2) thin films deposited on various substrates by LPCVD for temperatures <322 degrees C using titani um tetrabutoxide (TTB) have been studied. It has been found that the struct ures are dependent on the deposition temperature. XRD and Raman scattering show that amorphous TiO2 is formed below 215 degrees C, anatase between 235 degrees C-257 degrees C, a mixture of anatase and rutile at ca 270 degrees C, mainly rutile between 279 degrees C similar to 290 degrees C, and pure rutile above 300 degrees C.