Synthesis and characterization of CN thin films by IR laser deposition in a flow reactor

Citation
A. Crunteanu et al., Synthesis and characterization of CN thin films by IR laser deposition in a flow reactor, J PHYS IV, 9(P8), 1999, pp. 419-424
Citations number
13
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
9
Issue
P8
Year of publication
1999
Part
1
Pages
419 - 424
Database
ISI
SICI code
1155-4339(199909)9:P8<419:SACOCT>2.0.ZU;2-T
Abstract
Carbon nitride (CNx) this films were produced by CO2 laser (lambda=10.6 mu m) irradiation of mixtures containing C2H2/N2O/NH3, in a flow reactor, on S i substrates. The experimental parameters (partial concentrations of the re actants, gas flows. total pressure) were chosen in order to maximize the ni trogen incorporation in films. Chemical composition and bonding structure o f the deposited films were investigated by; X-ray photoelectron spectroscop y (XPS). Thus, it was found that nitrogen is chemically bonded to C in sp(2 ) or sp(3) configurations, the NIC ratio (considering only the N atoms bond ed to carbon) being similar to 20%. Scanning electron microscopy (SEM) show s a specific growth morphology, while the transmission electron diffraction (TED) and X-ray diffraction (XRD) analysis revealed that the CN, films wer e crystalline, with diffraction lines that marches rather well with those o f the predicted beta-C3N4 form.