CVD of ZrO2 using ZrI4 as metal precursor

Authors
Forsgren, K Harsta, A
Citation
K. Forsgren et A. Harsta, CVD of ZrO2 using ZrI4 as metal precursor, J PHYS IV, 9(P8), 1999, pp. 487-491
Citations number
10
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
9
Issue
P8
Year of publication
1999
Part
1
Pages
487 - 491
Database
ISI
SICI code
1155-4339(199909)9:P8<487:COZUZA>2.0.ZU;2-E
Abstract
A new process for CVD of zirconium oxide is presented. With zirconium tetra iodide, ZrI4, and oxygen as starting materials, crystalline ZrO2 is deposit ed on Si(100) at lower temperatures than with the conventional halide proce sses. The films are smooth and well-adherent and show no trace of iodine. T his work describes the basic features of the new process as well as the mic rostructural and electrical characteristics of the ZrO2 films.