A PE-MOCVD route to V2O5 nanostructured thin films

Citation
D. Barreca et al., A PE-MOCVD route to V2O5 nanostructured thin films, J PHYS IV, 9(P8), 1999, pp. 529-536
Citations number
24
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
9
Issue
P8
Year of publication
1999
Part
1
Pages
529 - 536
Database
ISI
SICI code
1155-4339(199909)9:P8<529:APRTVN>2.0.ZU;2-4
Abstract
Vanadium pentoxide thin films are grown on glass and borosilicate substrate s by PACVD using a vanadyl (IV) beta-diketonate as precursor. The depositio ns are can-led out in an RF-plasma reactor with Ar-O-2 mixtures and soft pr ocess conditions, obtaining high-purity nanocrysralline layers with a stron g preferential orientation. The microstructural and morphological character istics of the films, analyzed respectively by XRD and AFM, show that the sa mple features can be accurately tailored by an adequate choice of the synth esis conditions. The composition and purity of the films are studied by XPS and SIMS analyses. Impedance Spectroscopy is used to study the conductivit y of the layers and the dependence of electrical properties on microstructu re.