Accurate determination of pulsed current waveform in plasma immersion ion implantation processes

Citation
Xb. Tian et al., Accurate determination of pulsed current waveform in plasma immersion ion implantation processes, J APPL PHYS, 86(7), 1999, pp. 3567-3570
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
7
Year of publication
1999
Pages
3567 - 3570
Database
ISI
SICI code
0021-8979(19991001)86:7<3567:ADOPCW>2.0.ZU;2-0
Abstract
This article reports on the measurement of the ion current in plasma immers ion ion implantation. Our simulation results indicate that the total curren t peaks at the end of rise time of the applied voltage. However, our experi mental data acquired using a Rogowski coil and digital oscillator show the highest current at the beginning of the voltage pulse. The discrepancy can be explained by a displacement current attributable to the changing voltage , sheath capacitance, circuit loading effects, as well as secondary electro n emission. (C) 1999 American Institute of Physics. [S0021- 8979(99)02919-9 ].