The dynamical process of surface band bending induced by ion bombardment as
a function of ion fluence and energy has been studied with a special low e
nergy ion beam system and an x-ray photoelectron spectrometer. It was found
that 10 and 100 eV Ar+ bombardment of n- and p-InP (110) samples, which we
re prepared in ultrahigh vacuum by in situ cleavage of InP (100) bars, move
d their surface Fermi levels to a common pinning position 0.95 eV above the
valence-band maximum. The observed surface band bending was attributed to
the displacement damage in the near-surface region induced by the ion bomba
rdment. A quantitative analysis of the band bending data as a function of i
on fluence showed that for the 10 eV Ar+ bombardment the formation of ioniz
ed surface states at a density of about 1x10(12)/cm(2) in the band gap of I
nP was induced by an ion fluence of 5x10(16)/cm(2). As expected, an increas
e of bombardment energy from 10 to 100 eV greatly raised the formation prob
ability of surface defects. The results imply that very brief plasma exposu
re is sufficient to cause surface damage to a semiconductor that is severe
enough to affect the device performance of the semiconductor. (C) 1999 Amer
ican Institute of Physics. [S0021-8979(99)03819-0].