Optical properties of the bulk amorphous semiconductor ZnIn2Te4

The bulk amorphous-like (a-) semiconductor, a-ZnIn2Te4, is prepared by the melt-quench technique. The pseudodielectric-function spectra, <epsilon(E)>= <epsilon(1)(E)>+i <epsilon(2)(E)>, of a-ZnIn2Te4 are measured by spectrosco pic ellipsometry in the 1.2-5.3 eV photon-energy range at room temperature. The measured <epsilon(E)> spectra strongly resemble those of amorphous tet rahedrally bonded semiconductors. These spectra are analyzed using a simpli fied model of the interband optical transitions. Dielectric-related optical constants, such as the complex refractive index, absorption coefficient, a nd normal-incidence reflectivity, of a-ZnIn2Te4 are also been presented. (C ) 1999 American Institute of Physics. [S0021-8979(99)02219-7].