Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 degrees C

Authors
Scozzie, CJ Lelis, AJ McLean, FB Vispute, RD Choopun, S Patel, A Sharma, RP Venkatesan, T
Citation
Cj. Scozzie et al., Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 degrees C, J APPL PHYS, 86(7), 1999, pp. 4052-4054
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
7
Year of publication
1999
Pages
4052 - 4054
Database
ISI
SICI code
0021-8979(19991001)86:7<4052:LCIHPD>2.0.ZU;2-2
Abstract
The high-temperature dielectric properties of thin-film AlN that were pulse d-laser deposited on a heavily doped n-type 6H-SiC substrate are investigat ed from 25 to 450 degrees C. Capacitor leakage current densities of low 10( -8) A/cm(2) at 25 degrees C and mid 10(-3) A/cm(2) at 450 degrees C are rep orted for a 1.7 MV/cm dielectric field. The primary high-temperature leakag e mechanism appears to be Schottky emission with a zero-field barrier heigh t of 1.76 eV. A dielectric strength in excess of 1.7 MV/cm at 450 degrees C is reported. (C) 1999 American Institute of Physics. [S0021-8979(99)07019- X].