Positive temperature coefficient resistance effect in Ba1-xSrxTiO3 ceramics modified with Bi2O3 and PbO by a vapor-doping method

Citation
Jq. Qi et al., Positive temperature coefficient resistance effect in Ba1-xSrxTiO3 ceramics modified with Bi2O3 and PbO by a vapor-doping method, J MATER RES, 14(8), 1999, pp. 3328-3329
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
14
Issue
8
Year of publication
1999
Pages
3328 - 3329
Database
ISI
SICI code
0884-2914(199908)14:8<3328:PTCREI>2.0.ZU;2-0
Abstract
Ba1-xSrxTiO3-based positive temperature coefficient resistance (PTCR) ceram ics were prepared by use of a vapor-doping method. When doped with Bi, the PTCR effect is improved; when doped with lead, however, the effect is weake ned. The different influences of Bi and Pb doping on the ceramic properties are discussed in terms of the defect chemistry.