Solution deposition processing and electrical properties of Ba(Ti1-xSnx)O-3 thin films

Citation
Kh. Yoon et al., Solution deposition processing and electrical properties of Ba(Ti1-xSnx)O-3 thin films, J MATER RES, 14(7), 1999, pp. 2933-2939
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
14
Issue
7
Year of publication
1999
Pages
2933 - 2939
Database
ISI
SICI code
0884-2914(199907)14:7<2933:SDPAEP>2.0.ZU;2-S
Abstract
Ba(Ti1-xSnx)O-3 (0 less than or equal to x less than or equal to 0.3) thin films were deposited on a platinized silicon substrate by a solution deposi tion process with methoxyethanol, water, and propylene glycol as solvents. Dielectric propel-ties and current-voltage characteristics of the thin film s were investigated in conjunction with phase evolution and microstructures by varying heating temperatures and Sn contents (x). Thin films annealed a bove 700 degrees C showed a pure perovskite phase with nanoscaled grains (2 0-30 nm). The dielectric constant of the thin films depended on the Sn cont ent and showed a maximum value of 330 at x = 0.15. The leakage current beha vior of an optimum composition corresponding to x = 0.15 was examined by co rrelating with charge transport mechanisms. Schottky emission was found to be predominant at voltages less than 6.8 V, and Fowler-Nordheim tunneling a ppeared to be responsible above 6.8 V. The Schottky barrier of the Ba(Ti0.8 5Sn0.15)O-3-Pt interface was determined to be 1.49 eV.