Eu-doped Y2O3 phosphor films produced by electrostatic-assisted chemical vapor deposition

Citation
Kl. Choy et al., Eu-doped Y2O3 phosphor films produced by electrostatic-assisted chemical vapor deposition, J MATER RES, 14(7), 1999, pp. 3111-3114
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
14
Issue
7
Year of publication
1999
Pages
3111 - 3114
Database
ISI
SICI code
0884-2914(199907)14:7<3111:EYPFPB>2.0.ZU;2-8
Abstract
Europium-doped yttrium oxide (Y2O3:Eu) thermographic phosphor films were de posited on Ni-alloy substrates using a novel and cost-effective electrostat ic-assisted chemical vapor deposition (EACVD) technique. The thermoluminesc ence properties were studied under irradiation by an ultraviolet laser, It was found that crystallized Y2O3:Eu films could be deposited at a temperatu re as low as 550 degrees C, Annealing of the as-deposited films at higher t emperatures (>1000 degrees C) improved the luminescence properties due to f urther crystallization processes. The correlation of the lifetime decay and temperature change of the films showed that the EACVD-deposited films are suitable for use in phosphor thermometry for high-temperature applications.