Effect of doping level during rapid thermal processing of multilayer structures

A numerical model has been developed to examine the temperature history of a multilayer wafer undergoing rapid thermal processing (RTP) for various do ping densities. Partial transparency and thin film interference effects are considered. Doping levels from similar to 10(15) to similar to 10(18) cm(- 3) are examined. Numerical temperature predictions of the lightly doped waf er are compared with experimental measurements. Hearing rates for the light ly doped wafer fluctuate due to partial transparency effects and reach a ma ximum of similar to 50 degrees C/s. The heavily doped wafer sees a maximum heating rate of similar to 100 degrees C/s. Because the wafers are opaque a bove 700 degrees C regardless of their level of doping, all wafers reach st eady state at similar to 845 degrees C.