X. Feng et Y. Xi, Effects of thermal annealing on the dielectric properties of Pb(Zn1/3Nb2/3)O-3-based ceramics, J MATER RES, 14(5), 1999, pp. 1683-1685
Pb(Zn1/3Nb2/3)O-3 -based ceramics were thermally annealed at 700- 900 degre
es C for 4 h. Both the relative dielectric constant and dissipation factor:
in the vicinity of transition temperature were increased when the specimens
were thermally annealed at 700-900 degrees C, but the diffusion factor was
decreased. After thermal annealing, the maximum dielectric constant K-m wa
s increased from about 11,000 to 26,000. These phenomena can be related to
the domain wall motion and the elimination of internal stress.