Formation of C54-TiS2 in titanium on nitrogen-ion-implanted (001)Si with athin interposing Mo layer

Formation of TiSi2 in titanium on nitrogen-implanted (001)Si with a thin in terposing Mo layer has been investigated. The presence of a Mo thin interpo sing layer was found to decrease the formation temperature of C54-TiSi2 by about 100 degrees C. A ternary (Ti, Mo)Si-2 phase was found to distribute i n the silicide layer. The ternary compound is conjectured to provide more h eterogeneous nucleation sites to enhance the formation of C54-TiSi2. On the other hand, the effect of grain boundary for decreasing transformation tem perature was found to be less crucial. For Ti/Mo bilayer on 30 keV BF2+ or As+ + 20 keV, 1 x 10(15)/cm(2) N-2(+) implanted samples, a continuous C54-T iSi2 layer was found to form in all samples annealed at 650-950 degrees C. The presence of nitrogen atoms in TiSi2 is thought to lower the silicide/si licon interface energy and/or the silicide surface energy to maintain the i ntegrity of the C54-TiSi2 layer at high temperatures.