Epitaxial growth of patterned SrBi2Ta2O9 lines by channel stamping

Patterned epitaxial SrBi2Ta2O9 (SBT) lines with (001) out-of-plane orientat ion were grown on a (001) SrTiO3 substrate by the novel "channel stamping" method. Parallel channels in a poly(dimethylsiloxane) stamp were filled wit h a metalorganic precursor solution by spin coating. After solvent evaporat ion, the solid precursor within the channels was transferred to the substra te by stamping. Stamped precursor lines were pyrolyzed at 350 degrees C/1 h and then heated to 850 degrees C/1 h. It was shown by x-ray diffraction an d scanning electron microscopy that patterned SET lines were epitaxial, had a smooth surface with c-axis out-of-plane orientation, and a single in-pla ne orientation.