The kinetics of indium/amorphous-selenium multilayer thin film reactions

The reaction kinetics in vapor-deposited indium/amorphous-selenium (a - Se) multilayer thin films were studied using differential scanning calorimetry (DSC), x-ray diffraction (XRD), and transmission electron microscopy (TEM) , A number of reactions were observed upon heating with characteristic temp eratures which were found to be independent of the multilayer modulation wa velength. The initial interface reaction between In and a-Se is the formati on of an In2Se phase. Kinetic analyses of the In2Se formation process combi ned with TEM observations indicated chat interface reaction is characterize d by the two-dimensional growth of pre-existing In2Se regions formed during deposition to impingement in the plane of the original In/a-Se interface. The change of the density of In2Se grains with temperature was analyzed in terms of the derived kinetic parameters, which is consistent with TEM obser vations and the heat release measurements.