New approach in the monitoring and characterization of titanium nitride thin films

Citation
S. Logothetidis et al., New approach in the monitoring and characterization of titanium nitride thin films, J MATER RES, 14(2), 1999, pp. 436-441
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
14
Issue
2
Year of publication
1999
Pages
436 - 441
Database
ISI
SICI code
0884-2914(199902)14:2<436:NAITMA>2.0.ZU;2-O
Abstract
In situ and ex situ spectroscopic ellipsometry (SE), Raman spectroscopy (RS ), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) have been used to study the stoichiometry and characterize TiNx, thin films deposited by magnetron sputtering at various stoichiometries. In? si tu SE can provide parameters, such as the plasma energy, that can be utiliz ed for monitoring of the film stoichiometry, Besides plasma energy, optical phonon position in RS was also found to be a sensitive probe of TiNx, stoi chiometry as detected by RS, XPS, and ex situ SE. Under these conditions, A ES faces difficulties for reliable film characterization, and the complemen tary use of other techniques is required for determining the exact film sto ichiometry.