In situ and ex situ spectroscopic ellipsometry (SE), Raman spectroscopy (RS
), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy
(AES) have been used to study the stoichiometry and characterize TiNx, thin
films deposited by magnetron sputtering at various stoichiometries. In? si
tu SE can provide parameters, such as the plasma energy, that can be utiliz
ed for monitoring of the film stoichiometry, Besides plasma energy, optical
phonon position in RS was also found to be a sensitive probe of TiNx, stoi
chiometry as detected by RS, XPS, and ex situ SE. Under these conditions, A
ES faces difficulties for reliable film characterization, and the complemen
tary use of other techniques is required for determining the exact film sto
ichiometry.