Photoelectronic properties of (Cu, Fe, Al) incorporated CdS thin films

Citation
Hh. Afify et al., Photoelectronic properties of (Cu, Fe, Al) incorporated CdS thin films, J MAT S-M E, 10(7), 1999, pp. 497-502
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
10
Issue
7
Year of publication
1999
Pages
497 - 502
Database
ISI
SICI code
0957-4522(199909)10:7<497:PPO(FA>2.0.ZU;2-F
Abstract
CdS films, undoped and doped with Al, Cu, and Fe were prepared by the spray pyrolysis technique. The films have a polycrystalline hexagonal structure as shown from their XRD patterns. The crystallinity of pure CdS film is hig hly distorted by the addition of Al, or Fe, or Cu. The a.c. photoconductivi ty for the prepared samples was measured. The photoconductivity response sp ectra show two distinct peaks independent of the incorporated element. The position and intensity of these peaks are affected by the type and concentr ation of the elements incorporated. The optical absorption coefficient for the samples investigated, as calculated from transmission and reflection sp ectra, was studied as a function of photon energy. The pure CdS sample show s a sharp absorption edge while the incorporated films show a less sharp cu rve. The incorporation of Al enhances the d.c. photosensitivity response.